Specifications

Description

1 power switching transistor
2metal sealing
3 19.5gram per piece
4 High breakdown voltage
5strong ability against burning

1 The product structure: Silicon bipolar NPN power switching transistor,silicon NPN extension flat type, metal hermetic sealing

2 Characteristics:

  •        2 gram per piece
  •        Short opened or cut-off time High breakdown voltage
  •        great dissipation power
  •         light weight, small volumn

3 standard: national  standard of ΙΙ GB4589.1-89 GB12560-90 Q/FR115-93

4 application:  widely used in switch circuit,  amplifier circuit, etc.

Para name

symbols

DK150A

DK150B

DK150C

DK150D

DK150E

DK150F

DK150J

DK150H

unit

collector-base voltage (IE=0)

VCBO

300

350

400

450

500

550

600

700

V

collector-emitter voltage (IB=0)

VCEO

300

350

400

450

500

550

600

700

V

Emitter-base voltage (IC=0)

VEBO

5

V

collector DC current

IC

10

A

Base DC current

IB

1

A

Total dissipation power

TC≤25°C

TC=75°C

TC>25°C Lower voltage

 

Ptot

 

250

150

2

 

W

 

W/°C

Working temperature

Tj

150

°C

Store temperature

Tstg

-55~175

°C

     


Terms

FOB Price:
Minimum Order: Negotiable Trial Order
Port:
Payment Terms: T/T,Western Union

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