The CS2N60 is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time,low gate charge,lou on-state resistance and have a high rugged avalanche characteristics.
This power MOSFET is usually used at high speed swiching applications in power suplies,PWM motor controls,high efficient DC to DC converters and bridge circuits.
VDSS | VGS=0V, ID=250 uA | 600 |
|
| V |
RDS(on) a | VGS=10V, ID=1.5A |
|
| 4.5 | Ω |
VGS(th) | VDS= VGS, ID=250μA | 2 |
| 4 | V |
a y21S | VDS= 15V, ID=1.5A | 1.4 |
|
| S |
IDSS | VDS= 600V ,VGS=0V |
|
| 1 | μA |
IGSS | VGS=±30V |
|
| ±100 | nA |
td(off) a | ID = 2.0A, VDD = 300V VGS = 10V, RG = 18 |
| 30 |
| nS |
CiSS | VGS = 0V VDS = 25V f = 1.0MHz |
| 330 |
| pF |
a VSD | IS=2.0A, VGS=0V |
|
| 1.5 | V |
| FOB Price: | |
| Minimum Order: | Negotiable Trial Order |
| Port: | |
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